YOSHIDA, Masayuki; MATSUMOTO, Satoru; TANAKA, Shuji. Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon. Diffusion Fundamentals, [S. l.], v. 16, 2011. DOI: 10.62721/diffusion-fundamentals.16.636. Disponível em: https://diffusion.journals.qucosa.de/diffusion/article/view/636. Acesso em: 4 apr. 2025.