YOSHIDA, Masayuki; MOROOKA, Masami; TANAKA, Shuji; TAKAHASHI, Manabu. Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism. Diffusion Fundamentals, [S. l.], v. 2, 2005. DOI: 10.62721/diffusion-fundamentals.2.248. Disponível em: https://diffusion.journals.qucosa.de/diffusion/article/view/248. Acesso em: 10 apr. 2025.