Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Authors

  • Masayuki Yoshida
  • Satoru Matsumoto
  • Shuji Tanaka

DOI:

https://doi.org/10.62721/diffusion-fundamentals.16.636

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Published

2011-12-01

How to Cite

Yoshida, M., Matsumoto, S., & Tanaka, S. (2011). Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon. Diffusion Fundamentals, 16. https://doi.org/10.62721/diffusion-fundamentals.16.636

Issue

Vol. 16 (2011): Special Issue “Diffusion Fundamentals IV”

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-185496