Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism

Authors

  • Masayuki Yoshida
  • Masami Morooka
  • Shuji Tanaka
  • Manabu Takahashi

DOI:

https://doi.org/10.62721/diffusion-fundamentals.2.248

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Published

2005-09-25

How to Cite

Yoshida, M., Morooka, M., Tanaka, S., & Takahashi, M. (2005). Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism. Diffusion Fundamentals, 2. https://doi.org/10.62721/diffusion-fundamentals.2.248

Issue

Vol. 2 (2005): Special Issue "Diffusion Fundamentals I", First Part

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-196177